TERA-SED is a planar large-area GaAs-based photo- conductive emitter for impulsive generation of broad- band Terahertz (THz) radiation. It features a novel inter- digitated electrode MSM structure which allows for a large active area with kV/cm bias fields between indivi- dual electrodes. Yet, only low external bias voltages are required, eliminating the need for a pulsed, high- voltage supply. TERA-SED requires no external cooling. Two versions with different active areas are available, TERA-SED 3 and TERA-SED 10.
TERA-SED 3 emission spectrum at 10 V DC bias and 750 pJ pulse energy
acquired with Gigaoptics' high-speed ASOPS technique and GaP as electro-optic detection crystal.
Specifications
peak emission frequency
1.0 - 1.5 THz
spectral width (@ -10 dB)
~2.5 THz
optical excitation wavelength
700 - 860 nm
bias modulation frequency
DC to 100 kHz
max. av. dissipated electrical power
750 mW
pulsed THz field amplitude
up to 5 kV/cm*
useable area
3×3 mm2 (TERA-SED 3)
10×10 mm2(TERA-SED 10)
dimension (incl. metal holder)
1 inch (O.D.)
*Typical value only for excitation with 10 µJ pulses, field strength varies with specific experimental conditions. Typical value with 7.5 nJ pulses is 300 V/cm.
NEWS
21.12.2011
GIGAOPTICS exhibits at Photonics West 2012 in San Francisco. Come see us at booth #2610 in the South Hall.
Product release at the show: The new TACCOR, a hermetically sealed 1 GHz single-button operated femtosecond Ti:sapphire laser.
