General Product Information

TERA-SED is a planar large-area GaAs-based photo­conductive emitter for impulsive generation of broad­band Terahertz (THz) radiation. It features a novel interdigitated electrode MSM structure which allows for a large active area with kV/cm bias fields between in­dividual electrodes. Yet, only low external bias volt­ages are required, eliminating the need for a pulsed, high-voltage supply. TERA-SED requires no external cooling. Two versions with different active areas are available, TERA-SED 3 and TERA-SED 10.

Tera-SED | large-area terahertz emitter
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Tera-SED 3 emission spectrum at 10 V DC bias and 750 pJ pulse energy acquired with Gigaoptics' high-speed ASOPS technique and GaP as electro-optic detection crystal.
Specifications
peak emission frequency1.0 - 1.5 THz
spectral width (@ -10 dB)~2.5 THz
optical excitation wavelength700 - 860 nm
bias modulation frequencyDC to 100 kHz
max. av. dissipated electrical power750 mW
pulsed THz field amplitudeup to 5 kV/cm*
useable area3×3 mm2 (TERA-SED 3)
10×10 mm2(TERA-SED 10)
dimension (incl. metal holder)1 inch (O.D.)
*Typical value only for excitation with 10 µJ pulses, field strength varies with specific experimental conditions. Typical value with 7.5 nJ pulses is 300 V/cm.

NEWS

 
30.11.2009

Researchers at University of Konstanz have demonstrated a THz spectrometer with an unprecedented 142 MHz fre­quency precision. The rapid-scanning system is based on high-speed ASOPS and uses a GIGAJET TWIN dual fem­tosecond oscillator.

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